vishay siliconix dg2511/2512/2513 document number: 74454 s-70327?rev. b, 26-feb-07 www.vishay.com 1 low-voltage, low r on , single analog switch in miniqfn-6 package description the dg2511/dg2512/dg2513 are low on-resistance, sin- gle-pole/double-throw or single-pole/single-throw monolithic cmos analog switch. it is designed for low voltage applica- tions. the dg2511/dg2512/dg 2513 are ideal for portable and battery powered equipment, requiring high performance and efficient use of b oard space. in additional to the low on- resistance (1.3 at 2.7 v). the dg2511 is an spdt and the dg2512/dg2513 are spst. the switch conducts eq ually well in both directions when on, and blocks up to the power supply level when off. the dg2511/dg2512/dg2513 are bu ilt on vishay siliconix?s low voltage ji5l process. an epitaxial layer prevents latchup. break-before-make is guaranteed. the dg2511/dg2512/dg2513 represents a breakthrough in packaging development for analog switching products. the miniqfn-6 package (1.2 x 1.0 mm). as a committed partner to the community and the environ- ment, vishay siliconix manufactures this product with the lead (pb)-free device terminations. for analog switching products manufactured with nipdau device terminations, the lead (pb)-free "-e4" suffix is being used as a designator. features ? low voltage operation (1.8 v to 5.5 v) ? low on-resistance - r on : 1.3 at 2.7 v ? low charge injection ? low voltage logic compatible ? miniqfn-6 package (1.2 x 1.0 mm) benefits ? reduced power consumption ? simple logic interface ? high accuracy ? reduce board space ? guaranteed 2 v operation applications ? cellular phones ? communication systems ? portable test equipment ? battery operated systems ? sample and hold circuits ? adc and dac applications ? low voltage data acquisition systems functional block diagram and pin configuration gnd com nc v+ no dg2511 miniqfn-6 top view in 2 3 4 5 6 gnd com nc v+ nc dg2512 miniqfn-6 top view in 2 3 4 5 6 1 1 gnd com no v+ no dg251 3 miniqfn-6 top view in 2 3 4 5 6 1 pin 1 device marking: ax for dg2511 bx for dg2512 cx for dg2513 x = date/lot traceability code note: pin 1 has long lead ax truth table logic nc no 0 on off 1offon commercial ordering information temp range package part number - 40 to 85 c miniqfn-6 lead (pb)-free with tape and reel dg2511dn-t1-e4 dg2512dn-t1-e4 dg2513dn-t1-e4 rohs compliant
www.vishay.com 2 document number: 74454 s-70327?rev. b, 26-feb-07 vishay siliconix dg2511/2512/2513 notes: a. signals on nc, no, or com or in exceeding v+ will be clamped by inte rnal diodes. limit forward diode current to maximum curr ent ratings. b. all leads welded or soldered to pc board. c. derate 2.0 mw/c above 70 c. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit reference v+ to gnd - 0.3 to + 6 v in, com, nc, no a - 0.3 to (v+ + 0.3 v) continuous current (no, nc, com pins) 150 ma peak current (pulsed at 1 ms, 10 % duty cycle) 300 storage temperature d suffix - 65 to 150 c power dissipation (packages) b miniqfn-6 c 160 mw specifications (v+ = 3 v) parameter symbol test conditions otherwise unless specified v+ = 3 v, 10 %,v in = 0.4 v or 2.0 v e temp a limits - 40 to 85 c unit min b typ c max b analog switch analog signal range d v no , v nc , v com full 0 v+ v on-resistance r on v+ = 2.7 v, v com = 0.5 v/1.5 v i no , i nc = 100 ma room full 1.4 1.7 1.9 r on match r on room 0.15 r on flatness r on flatness room 0.3 0.4 switch off leakage current f i no(off) i nc(off) v+ = 3.3 v, v no , v nc = 1 v/3 v, v com = 3 v/1 v room full - 2 - 20 2 20 na i com(off) room full - 2 - 20 2 20 channel-on leakage current f i com(on) v+ = 3.3 v, v no , v nc = v com = 1 v/3 v room full - 2 - 20 2 20 digital control input high voltage v inh full 1.6 v input low voltage v inl full 0.4 input capacitance c in full 4 pf input current i inl or i inh v in = 0 or v+ full 1 1 a dynamic characteristics tu r n - o n t i m e t on v+ = 2.7 v, v no or v nc = 1.5 v, r l = 50 , c l = 35 pf room full 18 43 49 ns turn-off time t off room full 732 34 break-before-make time t bbm room 1 12 charge injection d q inj c l = 1 nf, v gen = 0 v, r gen = 0 room 3 pc off-isolation d oirr r l = 50 , c l = 5 pf, f = 1 mhz room - 58 db crosstalk d x ta l k room - 64 n o , n c off capacitance d c no(off) c nc(off) v in = 0 or v+, f = 1 mhz room 21 pf channel-on capacitance d c on room 61 power supply power supply range v+ 1.8 5.5 v power supply current i+ v in = 0 or v+ 0.01 1.0 a
document number: 74454 s-70327?rev. b, 26-feb-07 www.vishay.com 3 vishay siliconix dg2511/2512/2513 notes: a. room = 25 c, full = as determined by the operating suffix. b. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this data sheet. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. guarantee by design, nor subjected to production test. e. vin = input voltage to perform proper function. f. guaranteed by 5 v leakage testing, not production tested. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications (v+ = 5.0 v) parameter symbol test conditions otherwise unless specified v+ = 5.0 v, 10 %, v in = 0.6 v or 1.8 v e temp a limits - 40 to 85 c unit min b typ c max b analog switch analog signal range d v no , v nc , v com full 0 v+ v on-resistance r on v+ = 4.5 v, v com = 0.5 v/2.5 v, i no , i nc = 100 ma room full 11.3 1.45 r on match r on room 0.15 r on flatness r on flatness room 0.3 0.4 switch off leakage current i no(off) i nc(off) v+ = 5.5 v, v no , v nc = 1 v/4.5 v, v com = 4.5 v/1.0 v room full - 2 - 20 2 20 na i com(off) room full - 2 - 20 2 20 channel-on leakage current i com(on) v+ = 5.5 v, v no , v nc = v com = 1.0 v/4.5 v room full - 2 - 20 2 20 digital control input high voltage v inh full 1.8 v input low voltage v inl full 0.6 input capacitance c in full 4 pf input current i inl or i inh v in = 0 or v+ full 1 1 a dynamic characteristics tu r n - o n t i m e t on v no or v nc = 2.5 v, r l = 50 , c l = 35 pf room full 11 35 39 ns turn-off time t off room full 631 33 break-before-make time t bbm room 1 5 charge injection d q inj c l = 1 nf, v gen = 0 v, r gen = 0 room 14 pc off-isolation d oirr r l = 50 , c l = 5 pf, f = 1 mhz room - 58 db crosstalk d x ta l k room - 64 n o , n c off capacitance d c no(off) c nc(off) v in = 0 or v+, f = 1 mhz room 19 pf channel-on capacitance d c on room 61 power supply power supply range v+ v in = 0 or v+ 1.8 5.5 v power supply current i+ 0.01 1.0 a
www.vishay.com 4 document number: 74454 s-70327?rev. b, 26-feb-07 vishay siliconix dg2511/2512/2513 typical characteristics t a = 25 c, unless otherwise noted r on vs. v com and supply voltage r on vs. analog voltage and temperature r on vs. analog voltage and temperature v com - analog voltage (v) r on - on-resistance ( ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 012345 t = 25 c i s = 100 ma v+ = 4.5 v v+ = 5.0 v v+ = 5.5 v v+ = 2.0 v v+ = 2.7 v v+ = 3.0 v v+ = 3.6 v v+ = 1.8 v v com - analog voltage (v) r on - on-resistance (w) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1 1.5 2 2.5 3 v+ = 3.0 v, i s = 100 ma + 85 c + 25 c - 40 c v com - analog voltage (v) r on - on-resistance (w) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v+ = 5.0 v, i s = 100 ma + 85 c + 25 c - 40 c supply current vs. temperature supply current vs. input switching frequency leakage current vs. temperature temperature ( c) i+ - supply current (pa) 1 10 100 1000 10000 100000 - 60 - 40 - 20 0 20 40 60 80 100 v+ = 5.5 v v in = 0 v input switching frequency (hz) i+ - supply current (a) 10 100 1k 10k 100k 1m 10m v+ = 5.5 v 10 ma 1 ma 100 a 10 a 1 a 100 na 10 na 1 na temperature (c) leakage c urrent (pa) 1 10 100 1000 10000 - 60 - 40 - 20 0 20 40 60 80 100 v+ = 5.5 v i com(off) i com(on) i nc/no(on)
document number: 74454 s-70327?rev. b, 26-feb-07 www.vishay.com 5 vishay siliconix dg2511/2512/2513 typical characteristics t a = 25 c, unless otherwise noted leakage vs. analog voltage switching time vs. temperature and supply voltage insertion loss, off-isolation, crosstalk vs. frequency v com - analog voltage (v) leakage current (pa) - 500 - 400 - 300 - 200 - 100 0 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v+ = 5.5 v i com(off) i com(on) i no(off) /i nc(off) te m p erature ( c ) t on , t off , - switchint t ime (ns) 0 5 10 15 20 25 - 60 - 40 - 20 0 20 40 60 80 100 t on v+ = 2.7 v t on v+ = 4.5 v t off v+ = 2.7 v t off v+ = 4.5 v 100 k 1 m frequency (hz) 10 m 100 m 1 g loss, oirr, x tlak (db) - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 v+ = 3.0 v r l = 50 oirr x talk loss switching threshold vs. supply voltage charge injection vs. analog voltage v+ - supply voltage (v) v t - switching threshold (v) 0.0 0.5 1.0 1.5 2.0 123456 v no/nc - analog voltage (v) q - charge injection (pc) - 60 - 50 - 40 - 30 - 20 - 10 0 10 20 0.0 1.0 2.0 3.0 4.0 5.0 v+ = 2.0 v v+ = 3.0 v v+ = 5.0 v
www.vishay.com 6 document number: 74454 s-70327?rev. b, 26-feb-07 vishay siliconix dg2511/2512/2513 test circuits figure 1. switching time switch input c l (includes fixture and stray capacitance) v+ in no or nc c l 35 pf com logic input r l 50 v out gnd v+ 50 % 0 v 0 v logic input switch output t on t off logic "1" = switch on logic input waveforms inverted for switches that have the opposite logic sense. 0 v switch output v out =v com r l r l +r on + 3 v 0.9 x v out t r < 5 ns t f < 5 ns figure 2. break-before-make interval c l (includes fixture and stray capacitance) nc v no no v nc 0 v 3 v 0 v logic input switch output v o v nc = v no t r < 5 ns t f < 5 ns 90 % t d t d in com v+ gnd v+ c l 35 pf v o r l 50 figure 3. charge injection off on on in v out v out q = v out x c l c l com r gen v out nc or no 3 v in v gen gnd v+ v+ in depends on switch configuration: input polarity determined by sense of switch. +
document number: 74454 s-70327?rev. b, 26-feb-07 www.vishay.com 7 vishay siliconix dg2511/2512/2513 test circuits vishay siliconix maintains worldwide manufac turing capability. products ma y be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a composite of all qua lified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?74454 . figure 4. off-isolation in gnd nc or no 0 v, 2.4 v 10 nf com off isolation = 20 log v nc/ no v com r l analyzer v+ v+ com figure 5. channel off/on capacitance nc or no f = 1 mhz in com gnd 0 v, 2.4 v meter impedance analyzer 10 nf v+ v+
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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